AIXTRON 200 horizontal reactor
Specification
Methods
Epitaxial growth of monocrystalline thin films and heterostructures combining GaAs, AlGaAs, In(Ga)As, GaSb, GaAsSb, Al(Ga)Sb or In(Ga)Sb layersDetails
Type of access
Full-service (proposal-based)
Research area
Synthesis
Category
CVD
Subcategory
MOVPE
Guarantor
Hospodková, Alice
Site
LNSM
Expertise
In(Ga)As/Al(Ga)As/GaAs quantum heterostructures
InGaAs/GaAsSb/GaAs quantum heterostructures including InAs and GaSb quantum dots
InGaSb/AlGaSb/GaSb quantum heterostructures including InSb quantum dots
GaAs, AlGaAs or InGaAs, GaAsSb, InGaSb, GaSb, AlGaSb, AlSb monocrystalline thin films
Diamond-based porous 3D structures
InGaAs/GaAsSb/GaAs quantum heterostructures including InAs and GaSb quantum dots
InGaSb/AlGaSb/GaSb quantum heterostructures including InSb quantum dots
GaAs, AlGaAs or InGaAs, GaAsSb, InGaSb, GaSb, AlGaSb, AlSb monocrystalline thin films
Diamond-based porous 3D structures