UHV Preparation and Analytical System - Pulsed Laser Deposition TSST
The pulsed laser deposition preparation chamber (UHV-PLD) is one of the instruments of the UHV-Cluster, which combines preparation and in-situ analysis by several complementary methods for the characterization of surfaces and thin films. The UHV-PLD is used for the preparation of oxide-based layers, it provides a possibility of epitaxial growth of oxide heterostructures, ozone-assisted growth, and masking option. It is equipped with a UV-laser 248nm 700mJ 10Hz, high-precision RHEED, sample heating by IR laser, and independent load-lock.
Specification
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Excimer laser (0.09% F2 in Ne) 248nm, 700mJ, 10Hz
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Ozone-assisted growth
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Laser heating (IR diode laser, 980nm, ~100W)
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High-pressure RHEED
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Load lock
Publications
FAWAEER, S.; AL-QAISI, W.; SEDLÁKOVÁ, V.; MOUSA, M.; KNÁPEK, A.; SOBOLA, D., 2026: Role of Buffer Layers in Defect Chemistry and Parasitic Phase Formation of BiFeO3 Films on Silicon. ACS OMEGA 11 (5), p. 7782 - 7795, doi: 10.1021/acsomega.5c08852 (RIGAKU3, VERIOS, KRATOS-XPS, UHV-PLD, MAGNETRON)