UHV Complex system - MBE chamber1 (III-V)

Specification

• Deposition of III-V materials (Ga, In, Al, Sb; C, Si for doping) for epitaxial growth of semiconductor thin films and heterostructures and nanowires.
• Liquid nitrogen chilled, very clean process chamber minimizing contamination by other processes.
• Quartz microbalance and beam flux monitor for calibration of deposition rates.
• RHEED system for real-time layer growth measurement.
• Sample heating by electron beam heater up to 800°C (1200 °C for short time)
• Pyrometer for temperature measurement.
• Quartz viewports for attaching ellipsometer.
• There is no possibility to insert custom evaporator.

Gallery