Atmospheric Pressure Chemical Vapor Deposition
System for a precisely controlled growth of oxides on silicon wafers in horizontal quartz tubes with soft-loading placement of boats holding up to 50 wafers in one run. Temperature is controlled in 3 independent zones. The basic process consists of dry or wet thermal oxide growth; in the latter case, a H2-O2 mixture reacts in an external burner. Excessive deposits are cleaned using dichloroethylene (DCE) injection.
Specification
Methods
SiO2 depositionProcesses
Atmospheric
- dry oxidation - up to 4 nm/min at 900–1050 °C
- wet oxidation - up to 5 nm/min [using external
burner creating hot water vapor from the H2 + O2 reaction
The highest quality oxides are obtained with simultaneous DCE etching of spurious depositions
Proces gasses: N2, O2, N2O, H2
Homogeneity in all processes across a single wafer is better than 3%, and less than 8% for the whole batch
Technical Data
Sample dimensions W x D x H (mm) 5600 x 100 x 100
Wafer size (mm) up to 100 mm
Wafer load 50 pcs
Heating system 3 zone
Process temperature 200°C to 1150°C, ± 0.5°C across flat zone
Power consumption 30 kW per tube
Power supply 100 mm: 3-phase, 400 VAC, 140 A, 50 Hz
Clean, dry air 70 (4,8 bar)
Cooling water 40 LPM
Exhaust 210m³/h per tube
Automation, boat elevator, and wafer handling
Publications
LIU, X.; FECKO, P.; FOHLEROVÁ, Z.; PEKÁREK, J.; KARÁSEK, T.; NEUŽIL, P., 2020: Parylene Micropillars Coated with Thermally Grown SiO2. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 38 (6), p. 38 - 6, doi: 10.1116/6.0000558 (SUSS-MA8, SUSS-RCD8, DWL, DRIE, RIE-FLUORINE, PARYLENE-SCS, XEF2, APCVD, LYRA)