UHV Preparation and Analytical System - Low Energy Electron Microscope SPECS FE-LEEM P90
Low energy electron microscope (LEEM) is one of the instruments of the UHV-Cluster, which combines preparation and in-situ analysis by several complementary methods for the characterization of surfaces and thin films. The LEEM instrument utilizes low energy, elastically backscattered electrons to image surfaces with high spatial and temporal resolution. Advantages of LEEM over other surface imaging techniques are real-time imaging capability and existing several unique contrast mechanisms for image formation. LEEM is a powerful tool for studying the dynamic and static properties of surfaces and thin films, phase transitions, reactions, structure and morphology, and more.
Specification
- Photoelectron/Low Energy Electron Microscopy with a resolution down to 10 and 5 nanometers, respectively.
- Real-time imaging of surface processes (kinetics of the growth of layers and reactions) combined with micro-diffraction and UV spectroscopic modes for surface lattice and the electronic structure determination, respectively.
- Possibility to measure up to sample temperature of 1500 K, during evaporation or gas dosing.
- Equipment: Hg lamp, He UV source (He-I, He-II), cold-cathode electron gun (15keV), electron beam heater. Independent preparation chamber and load-lock with sample storage. Port for effusion cell separated by gate valve from analytical chamber.
Gallery
