Scanning electron microscope (SEM) MIRA3 XMU

Scanning electron microscope (SEM) MIRA3 XMU Description • Scanning electron microscope (SEM) is used to study the morphology and topography of conductive and non-conductive materials in high resolution (micro to nano-scale). • Observation of surface samples with high depth of focus using multiple detection system (SE, BSE, STEM) including elemental analysis using energy dispersive spectrometer (EDS). Applications • Observation of both the surface and internal structure of micro and nano-objects (phase interface such as matrix-filler/reinforcement, particle distribution, aggregates and defects, fracture surfaces, porous 3D materials, units of supramolecular structure, etc.) • evaluation of the shape and dimensions (length, diameter, volume, roughness) of powders, tubes, short fibers • fast and highly accurate chemical microanalysis and elemental mapping of a sample surface • qualitative elemental analysis including determination of the distribution of each element • quantitative analysis of the individual elements in a sample • The structural analysis of polymeric materials, biopolymers and composites, biomaterials, ceramics, bones, teeth, substrates for tissue engineering, etc. Specification • High Brightness Schottky Emitter • Detectors: SE, BSE, In-beam SE, In-Beam BSE LVSTD STEM detector EDX analysis • High-vacuum (≤9x10-3Pa) or low-vacuum mode (7-500 Pa) • Magnification 25 to 1 000 000x • Acceleration voltage 200 V to 30 kV • X-Y-Z 130×130×100mm • Maximum specimen height: 106 mm

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